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RADSOL 2010
Thursday 25 March

The third RADSOL workshop (in French) will be held on June 3-4, 2010 at CNRS Paris, Campus Gérard Mégie.

After the success of the two first editions in 2008 and in 2009, RADSOL 2010 will continue the series of informal workshops dedicated to the problematics of radiation effects at ground level in the natural terrestrial environment.

 
On the Web : RADSOL 2010 website
Invited paper at ESREF 2010
Thursday 25 March

An invited talk will be given at the next 21st European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, October 2010 11th - 15th, Monte Cassino Abbey and Gaeta - Italy.

This presentation is entitled:

Soft-Errors induced by terrestrial neutrons and natural alpha-particle emitters in advanced memory circuits at ground level

by Jean-Luc AUTRAN – Aix-Marseille University, IM2NP-CNRS (France).

The final paper will be published in a Special Issue of Microelectronics Reliability (Elsevier).

 
On the Web : ESREF 2010 website
Invited paper at ICICTD 2009
Monday 16 February

An invited talk will be given at the next International Conference on IC Design and Technology (ICICTD 2009) held in Austin, TX,May 18-20, 2009 about the ASTEP project. This presentation is entitled:

"Combined Altitude and Underground Real-Time SER Characterization of CMOS Technologies on the ASTEP-LSM Platform (invited)"

by J.L. Autran, P. Roche, S. Sauze, G. Gasiot, D. Munteanu, P. Loaiza, M. Zampaolo and J. Borel

 
RADSOL 2009
Monday 13 October

After the success of the first edition, RADSOL 2009 will be held in Paris in June 2009. This national workshop (in French) will address the growing influence of the radiative natural constraint on the reliability of electronic systems. This seminar is designed for payers, designers and systems integrators (motor transport, rail transport, computers, data processing) and offers a review of methods of evaluation and testing of the effects of natural radiation on the reliability of components and systems.

 
Friday 26 March 2010
To be presented at International Conference on IC Design & Technology (ICICTD 2010) – June 2-4, 2010
Alpha-Emitter Induced Soft-Errors in CMOS 130nm SRAM: Real-Time Underground Experiment and Monte-Carlo Simulation
S. Martinie, S. Uznanski, J.L. Autran, P. Roche, G. Gasiot, D. Munteanu, S. Sauze, P. Loaiza, G. Warot, M. Zampaolo
We will report at ICICTD 2010 a long-duration (> 2 years) real-time characterization study of SRAM memories at the underground laboratory of Modane (LSM) to quantify alpha-emitter radioactive impurities present in the circuit materials and responsible of soft-errors detected in absence of atmospheric neutrons. Experimental data have been obtained using 3.5 Gbit of SRAMs manufactured in CMOS 130 nm technology. In a second part of this work, the underground experiment is simulated using a Monte-Carlo code based on a numerical Diffusion-Collection model to extract the contamination level related to the disintegration chain of uranium in silicon at secular equilibrium. Results are finally compared to data obtained from experimental counting experiments using an ultra low background alpha-particle gas proportional counter.
 
The most recent articles
Thursday 15 July 2010
by Sébastien Sauze
HOURLY DATA FOR JUNE 2010
This is XLS Monthly file of Hourly Data for the month of June 2010.
Barometric response of PdBNM: P0=749.2mbar, b=-0.6642 %/mbar

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Thursday 15 July 2010
by Sébastien Sauze
HOURLY DATA FOR MAY 2010
This is XLS Monthly file of Hourly Data for the month of May 2010.
Barometric response of PdBNM: P0=749.2mbar, b=-0.6642 %/mbar

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Monday 17 May 2010
by Sébastien Sauze
HOURLY DATA FOR APRIL 2010
This is XLS Monthly file of Hourly Data for the month of April 2010.
Barometric response of PdBNM: P0=749.2mbar, b=-0.6642 %/mbar

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Thursday 1 April 2010
by Sébastien Sauze
HOURLY DATA FOR NOVEMBER 2009 to MARCH 2010
This is XLS Monthly file of Hourly Data for the month from November 2009 to March 2010.
Barometric response of PdBNM: P0=749.2mbar, b=-0.6642 %/mbar

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Friday 26 March 2010
by Jean-Luc Autran
Radiation Effects in Semiconductors - Chapter 9
Real-Time Soft-Error Rate Characterization of Advanced SRAMs
Jean-Luc Autran, Daniela Munteanu, Sébastien Sauze, Philippe Roche, Gilles Gasiot
This chapter briefly surveys different aspects of the ASTEP/LSM program, including the description of the two test platforms and their radiation environment, the real-time setups and a synthesis of more than one cumulative year of real-time characterization concerning two generations of SRAM circuits manufactured in 130 and 65 nm CMOS technologies.
This book chapter will be published in Radiation Effects in Semiconductors (ISBN: 9781439826942) Editor(s): Krzysztof Iniewski, CMOS Emerging Technologies Inc., Vancouver, British Columbia
See the CRC Press web page for this book (...)

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