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Presentation at IRPS 2013
Tuesday 19 March

A new type of natural radiation experiment on FLASH memories will be presented at the 2013 IEEE International Reliability Physics Symposium (IRPS 2013), April 14-18, 2013, Monterey, CA, USA. The paper, entitled "Soft Errors Induced by Natural Radiation at Ground Level in Floating Gate Flash Memories", will be presented in the Soft-Error session (oral presentation).

 
ASTEP presentation at IRPS 2012
Wednesday 28 December
The first results concerning the new ASTEP 40nm SRAM real-time experiment launched in 2011 will be presented at the 2012 IEEE International Reliability Physics Symposium (IRPS 20112), April 15-19, 2012, Hyatt Regency Orange County, Anaheim, CA, USA. The paper, entitled "Real-Time Soft-Error Testing of 40nm SRAMs", has been accepted for oral presentation in the Soft-Error session.
 
RADSOL 2011
Friday 14 January

The fourth RADSOL workshop, organized by the GDR CNRS ERRATA, will be held on June 14-15, 2011 at CNRS Paris, Campus Gérard Mégie

After the success of the first editions in 2008, 2009 and 2010, RADSOL 2011 will continue the series of informal workshops dedicated to the problematics of radiation effects at ground level in the natural terrestrial environment.

 
Invited paper at ESREF 2010
Thursday 25 March

An invited talk will be given at the next 21st European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, October 2010 11th - 15th, Monte Cassino Abbey and Gaeta - Italy.

This presentation is entitled:

Soft-Errors induced by terrestrial neutrons and natural alpha-particle emitters in advanced memory circuits at ground level

by Jean-Luc AUTRAN – Aix-Marseille University, IM2NP-CNRS (France).

The final paper will be published in a Special Issue of Microelectronics Reliability (Elsevier).

 
On the Web : ESREF 2010 website
Invited paper at ICICTD 2009
Monday 16 February

An invited talk will be given at the next International Conference on IC Design and Technology (ICICTD 2009) held in Austin, TX,May 18-20, 2009 about the ASTEP project. This presentation is entitled:

"Combined Altitude and Underground Real-Time SER Characterization of CMOS Technologies on the ASTEP-LSM Platform (invited)"

by J.L. Autran, P. Roche, S. Sauze, G. Gasiot, D. Munteanu, P. Loaiza, M. Zampaolo and J. Borel

 
Wednesday 11 December 2013
Invited paper presented at IEDM 2013
Technology Downscaling Worsening Radiation Effects in Bulk: SOI to the Rescue
by P. Roche, J.-L. Autran*, G. Gasiot, D. Munteanu*, STMicroelectronics, *Aix-Marseille University & CNRS, IM2NP
An invited paper dedicated to Soft Error Rate issues in advanded bullk and FD-SOI technologies will be published at the 2013 IEEE International Electron Devices Meeting (Washington, DC, December 9-11, 2013).
Abstract: Extrinsic atmospheric radiations are today as important to IC reliability as intrinsic failure modes. More and more industry segments are impacted. Sub-40nm downscaling has a profound impact on the Soft Error Rate (SER) of BULK technologies. The enhanced resilience of latest SOI technologies will fortunately help leveraging existing robust design solutions. Extrinsic atmospheric radiations are today as important to IC reliability as intrinsic failure modes. More and more industry segments are impacted. Sub-40nm downscaling has a profound impact on the Soft Error Rate (SER) of BULK technologies. The enhanced resilience of latest SOI technologies will fortunately help leveraging existing robust design solutions.
 
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Monday 27 January 2014
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Wednesday 11 December 2013
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Tuesday 22 October 2013
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Friday 11 October 2013
by Sébastien Sauze
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Monday 9 September 2013
by Sébastien Sauze
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